|Series||ERA report -- 88-0347, ERA project -- 49-02-2818|
|Contributions||ERA Technology Ltd.|
For High Speed MOSFET Gate Drive Circuits By Laszlo Balogh ABSTRACT The main purpose of this paper is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design Size: KB. the 15V required to drive the gate can be generated from a much lower voltage. Figure 12 shows an example of the gate capacitance being used as part of a resonant circuit. This type of solution is mainly of use in drive circuits of high power MOSFETs which interface directly with standard 5V CMOS microcontrollers. Figure I Introduction. MOSFET s are widely used in switching power supplies due to their low internal resistance and fast switching speed. The MOSFET often selects a appropriate driver circuit based on the parameters of the power-supply IC and MOSFET. Let's discuss the drive circuits of MOSFETs for switching power supplies. The high side driver in Figure 3 is a TC, which has a peak output current of A. The TCN has a peak output current capability of 1A. They can drive MOSFETs capable of 10A continu-ous drain current in 30nsec. TABLE 1B: MOSFET die size vs. suggested drive family. MOSFET Die Size C EI of MOSFET Suggested Driver Family Faster.
The IC IX, an intelligent high-speed gate driver, can be easily used to drive silicon-carbide (SiC) MOSFETs as well as standard MOSFETs and IGBTs. The IX provides negative voltage to the gate from zero to minus 10V and positive voltage from 12V to 25V as long as the difference between negative and positive voltage does not exceed 30V. When switching high-power MOSFETs or any low-speed circuits, the exact value of a gate resistor typically isn’t important. I usually use a 10R or R resistor and adjust it while testing if needed. When switching speeds approach several thousand Hz, it becomes important to do some calculations on what maximum-sized gate resistor to use. The H-Bridge Motor Driver Circuit This circuit is called H-bridge because the MOSFETs form the two vertical strokes and the motor forms the horizontal stroke of the alphabet ‘H’. It is the simple and elegant solution to all motor driving problems. The direction can be . Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in power loss or noise generation and blame the MOSFETs, when in fact they need to take a closer look at how they’re driving the MOSFETs.
What is a power-MOSFET gate driver? It is a power amplifier that accepts a low-power input from a controller IC and produces the appropriate high-current gate drive for a power MOSFET. Driving HEXFET Power MOSFETs from Linear Circuits 7. Drive Circuits Not Referenced to Ground 8. Drive Requirements and Switching Characteristics of Logic Level HEXFET a high impedance drive circuit. A zener would compound this problem, rather than solving it. Sometimes a zener is added to reduce the ringing generated by the. Driving high-power MOSFETs at high frequencies requires a gate drive signal of more than 10 Vp-p. Generating high frequencies is usually accomplished via a frequency generator, such as a frequency. High State Drive Outputs Logic Inputs Grounded Low State Drive Outputs APPLICATIONS INFORMATION Description The MC is a dual noninverting high speed driver specifically designed to interface low current digital circuitry with power MOSFETs. This device is constructed with Schottky clamped Bipolar Analog technology which.